A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

  1. Rengel, R.
  2. Martin, M.J.
  3. González, T.
  4. Mateos, J.
  5. Pardo, D.
  6. Dambrine, G.
  7. Raskin, J.-P.
  8. Danneville, F.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2006

Volumen: 53

Número: 3

Pages: 523-532

Type: Article

DOI: 10.1109/TED.2005.863541 GOOGLE SCHOLAR
La source de données: Scopus