F.
Danneville
Publikationen, an denen er mitarbeitet F. Danneville (14)
2011
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Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs
IEEE Electron Device Letters
2009
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Comparative study of laterally asymmetric channel and conventional MOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2006
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A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs
Semiconductor Science and Technology, Vol. 21, Núm. 3, pp. 273-278
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A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532
2005
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Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation
AIP Conference Proceedings
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Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs: High-frequency performance
2005 Spanish Conference on Electron Devices, Proceedings
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On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs
AIP Conference Proceedings
2003
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High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation
Proceedings of SPIE - The International Society for Optical Engineering
2002
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Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour
Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156
1998
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Influence of Al mole fraction on the noise performance of GaAs/AlxGa1-xas HEMT's
IEEE Transactions on Electron Devices, Vol. 45, Núm. 9, pp. 2081-2083
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Noise analysis of 0.1 μm gate MESFETs and HEMTs
Solid-State Electronics, Vol. 42, Núm. 1, pp. 79-85
1997
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Noise and transit time in ungated FET structures
IEEE Transactions on Electron Devices, Vol. 44, Núm. 12, pp. 2128-2135
1996
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Influence of real-space transfer on transit time and noise in HEMTs
European Solid-State Device Research Conference
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Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures
Solid-State Electronics, Vol. 39, Núm. 11, pp. 1629-1636