BEATRIZ
ORFAO E VALE TABERNERO
Investigador Predoctoral
Tomás
González Sánchez
Catedrático de Universidad
Publicacións nas que colabora con Tomás González Sánchez (8)
2024
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
2023
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Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
Applied Physics Express, Vol. 16, Núm. 2
2022
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Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics, Vol. 132, Núm. 4
2021
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301
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Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
2020
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Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535