Publications (9) BEATRIZ ORFAO E VALE TABERNERO publications

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2024

  1. GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

    2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024

  2. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

  3. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2023

  1. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

2022

  1. Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes

    32nd International Symposium of Space Terahertz Technology, ISSTT 2022

  2. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  2. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2020

  1. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535