Tomás
González Sánchez
Catedrático de Universidad
Javier
Mateos López
Catedrático de Universidad
Publicaciones en las que colabora con Javier Mateos López (300)
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics, Vol. 135, Núm. 4
2023
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A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
Applied Physics Express, Vol. 16, Núm. 2
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Terahertz Electronic Devices
Springer Handbooks (Springer Science and Business Media Deutschland GmbH), pp. 807-849
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology, Vol. 34, Núm. 32
2022
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Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics, Vol. 132, Núm. 4
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4