Tomás
González Sánchez
Catedrático de Universidad
Héctor
Sánchez Martín
Personal Investigador
Publications by the researcher in collaboration with Héctor Sánchez Martín (22)
2024
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High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758
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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
IEEE Transactions on Microwave Theory and Techniques
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology, Vol. 34, Núm. 32
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4
2021
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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139
2020
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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
Microelectronics Reliability, Vol. 114
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Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Semiconductor Science and Technology, Vol. 35, Núm. 11
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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Nanotechnology, Vol. 31, Núm. 40, pp. 405204
2018
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Fabrication Process of Non-Linear Planar Diodes Based on GaN
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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GaN nanodiode arrays with improved design for zero-bias sub-THz detection
Semiconductor Science and Technology, Vol. 33, Núm. 9
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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
Applied Physics Letters, Vol. 113, Núm. 4
2017
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Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Semiconductor Science and Technology, Vol. 32, Núm. 3
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Geometry and bias dependence of trapping effects in planar GaN nanodiodes
2017 Spanish Conference on Electron Devices, CDE 2017
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Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity
2017 Spanish Conference on Electron Devices, CDE 2017