University of Lille Nord de France-ko ikertzaileekin lankidetzan egindako argitalpenak (8)

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  2. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

2018

  1. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    Journal of Applied Physics, Vol. 123, Núm. 3

2017

  1. Stochastic model for action potential simulation including ion shot noise

    Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540