Biltzar ekarpenak (49) Ikertzaileren baten partaidetza izan duten argitalpenak

2004

  1. 100nm InAlAs/InGaAs double-gate HEMT using transferred substrate

    Technical Digest - International Electron Devices Meeting, IEDM

  2. 100nm InAlAs/InGaAs double-gate HEMT using transferred substrate

    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST

  3. 2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: Active layer thickness and noise performance

    Semiconductor Science and Technology

  4. 3D monte carlo analysis of discrete dopant effects on electron noise in Si devices

    2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

  5. About the inclusion of eddy currents in micromagnetic computations

    Physica B: Condensed Matter

  6. An approach to the magnetic disaccommodation in Nd doped yttrium iron garnets

    Materials Science Forum

  7. Analysis of the frequency dependence of the magnetoimpedance in current annealed amorphous wires

    Journal of Optoelectronics and Advanced Materials

  8. Anomalous behavior of buried strained-Si channel heterojunction fets at low temperatures

    Proceedings - Electrochemical Society

  9. Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

    2004 4th IEEE Conference on Nanotechnology

  10. Detection of sub-Terahertz and Terahertz radiation by plasma waves in silicon field effect transistors

    Proceedings of IEEE Sensors

  11. Detection of sub-terahertz and terahertz radiation by plasma waves in silicon field effect transistors

    PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3

  12. Dynamical formation of hot-carrier intergroup noise under sub-terahertz cyclostationary conditions

    Semiconductor Science and Technology

  13. Effect of disorder on the density of states of a two-dimensional electron gas under magnetic field

    Physica B: Condensed Matter

  14. Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

    Applied Surface Science

  15. Heating process in the pre-breakdown regime of the quantum Hall effect: A size-dependent effect

    Physica B: Condensed Matter

  16. Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs

    Proceedings of SPIE - The International Society for Optical Engineering

  17. Implementation of the "hyperdynamics of infrequent events" method for acceleration of thermal switching dynamics of magnetic moments

    IEEE Transactions on Magnetics

  18. Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs

    Proceedings of SPIE - The International Society for Optical Engineering

  19. Influence of Pauli exclusion principle on the strong field ionization of two electron atoms

    Applied Physics B: Lasers and Optics

  20. Influence of eddy currents on reversal processes in nanocubes depending on size

    IEEE Transactions on Magnetics