F. Danneville-rekin lankidetzan egindako argitalpenak (14)

2011

  1. Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs

    IEEE Electron Device Letters

2009

  1. Comparative study of laterally asymmetric channel and conventional MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2006

  1. A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

    Semiconductor Science and Technology, Vol. 21, Núm. 3, pp. 273-278

  2. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532

2005

  1. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

    AIP Conference Proceedings

  2. Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs: High-frequency performance

    2005 Spanish Conference on Electron Devices, Proceedings

  3. On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

    AIP Conference Proceedings

2003

  1. High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation

    Proceedings of SPIE - The International Society for Optical Engineering

2002

  1. Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

    Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156

1998

  1. Influence of Al mole fraction on the noise performance of GaAs/AlxGa1-xas HEMT's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 9, pp. 2081-2083

  2. Noise analysis of 0.1 μm gate MESFETs and HEMTs

    Solid-State Electronics, Vol. 42, Núm. 1, pp. 79-85

1997

  1. Noise and transit time in ungated FET structures

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 12, pp. 2128-2135

1996

  1. Influence of real-space transfer on transit time and noise in HEMTs

    European Solid-State Device Research Conference

  2. Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

    Solid-State Electronics, Vol. 39, Núm. 11, pp. 1629-1636