Escuela de doctorado
FÍSICA APLICADA Y TECNOLOGÍA
Publicaciones (92) Publicaciones en las que ha participado algún/a investigador/a
2004
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1/f Noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K
Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3845-3847
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100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
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100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
Technical Digest - International Electron Devices Meeting, IEDM
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2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: Active layer thickness and noise performance
Semiconductor Science and Technology
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3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices
Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 311-315
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3D monte carlo analysis of discrete dopant effects on electron noise in Si devices
2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
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A complete description of the spin force
Journal of Physics B: Atomic, Molecular and Optical Physics, Vol. 37, Núm. 2, pp. 435-444
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A computer-assisted experiment for the measurement of the temperature dependence of the speed of sound in air
American Journal of Physics, Vol. 72, Núm. 2, pp. 276-279
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A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications
Semiconductor Science and Technology, Vol. 19, Núm. 5, pp. 634-643
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About the inclusion of eddy currents in micromagnetic computations
Physica B: Condensed Matter
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An approach to the magnetic disaccommodation in Nd doped yttrium iron garnets
Materials Science Forum
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Analysis of rainfall trends and dry periods on a pluviometric gradient representative of Mediterranean climate in the Duero Basin, Spain
Journal of Arid Environments, Vol. 58, Núm. 2, pp. 215-233
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Analysis of the frequency dependence of the magnetoimpedance in current annealed amorphous wires
Journal of Optoelectronics and Advanced Materials
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Anomalous behavior of buried strained-Si channel heterojunction fets at low temperatures
Proceedings - Electrochemical Society
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Ballistic GaInAs/AlInAs devices technology and characterization at room temperature
2004 4th IEEE Conference on Nanotechnology
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Behavior of the contacts of quantum hall effect devices at high currents
Journal of Applied Physics, Vol. 96, Núm. 1, pp. 404-410
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Characterization and modeling of erbium-doped fibers and integrated waveguides
Fiber and Integrated Optics, Vol. 23, Núm. 2-4, pp. 189-200
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Circulation weather types and cloud-to-ground flash density over the Iberian Peninsula
International Journal of Climatology, Vol. 24, Núm. 1, pp. 109-123
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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
Solid-State Electronics, Vol. 48, Núm. 8, pp. 1401-1406
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Computing solenoidal fields in micromagnetic simulations
IEEE Transactions on Magnetics, Vol. 40, Núm. 5, pp. 3240-3243