Publications by the researcher in collaboration with María Susana Pérez Santos (100)

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  3. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  4. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  2. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

  3. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2020

  1. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Fabrication Process of Non-Linear Planar Diodes Based on GaN

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

    Semiconductor Science and Technology, Vol. 33, Núm. 9