Tomás
González Sánchez
Catedrático de Universidad
María Susana
Pérez Santos
Catedrática de Universidad
Publications by the researcher in collaboration with María Susana Pérez Santos (100)
2024
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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
IEEE Transactions on Microwave Theory and Techniques
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Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature
IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
2023
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A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
Applied Physics Express, Vol. 16, Núm. 2
2022
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Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics, Vol. 132, Núm. 4
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
2021
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
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Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
2020
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Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC
2018
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Fabrication Process of Non-Linear Planar Diodes Based on GaN
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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GaN nanodiode arrays with improved design for zero-bias sub-THz detection
Semiconductor Science and Technology, Vol. 33, Núm. 9