Tomás
González Sánchez
Catedrático de Universidad
María Jesús
Martín Martínez
Catedrática de Universidad
Publications by the researcher in collaboration with María Jesús Martín Martínez (22)
2020
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Special Issue on Terahertz Devices
Semiconductor Science and Technology, Vol. 35, Núm. 4
2015
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Preface
Journal of Physics: Conference Series
2008
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Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study
Physica Status Solidi (C) Current Topics in Solid State Physics
2007
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Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs
2007 Spanish Conference on Electron Devices, Proceedings
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RF noise and scaling in nanometer SOI MOSFETs: Influence of quasiballistic transport
AIP Conference Proceedings
2006
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A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532
2005
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Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation
AIP Conference Proceedings
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Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation
Unsolved Problems of Noise and Fluctuations
2004
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Monte Carlo particle-based simulation of DG MOSFETs: Influence of space-quantization effects on the high-frequency noise
Proceedings of SPIE - The International Society for Optical Engineering
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On the influence of space-quantization effects on the RF noise behaviour of DG mosfets
Fluctuation and Noise Letters, Vol. 4, Núm. 4
2003
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High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation
Proceedings of SPIE - The International Society for Optical Engineering
2002
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Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions
Physica B: Condensed Matter
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Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour
Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156
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RF noise in a short-channel n-MOSFET: A Monte Carlo study
Materials Science Forum
2001
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High injection effects on noise characteristics of Si BJTs and SiGe HBTs
Microelectronics Reliability, Vol. 41, Núm. 6, pp. 847-854
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Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
Semiconductor Science and Technology, Vol. 16, Núm. 11, pp. 939-946
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Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies
Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1582-1588
1996
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Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre n+nn+ silicon structures
Semiconductor Science and Technology, Vol. 11, Núm. 6, pp. 865-872
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Hydrodynamic modeling of transport and noise spectra in n+nn+semiconductor structures
European Solid-State Device Research Conference
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Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm
Semiconductor Science and Technology, Vol. 11, Núm. 3, pp. 380-387