Publicaciones en las que colabora con María Jesús Martín Martínez (22)

2020

  1. Special Issue on Terahertz Devices

    Semiconductor Science and Technology, Vol. 35, Núm. 4

2015

  1. Preface

    Journal of Physics: Conference Series

2008

  1. Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

    2007 Spanish Conference on Electron Devices, Proceedings

  2. RF noise and scaling in nanometer SOI MOSFETs: Influence of quasiballistic transport

    AIP Conference Proceedings

2006

  1. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532

2005

  1. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

    Unsolved Problems of Noise and Fluctuations

  2. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

    AIP Conference Proceedings

2004

  1. Monte Carlo particle-based simulation of DG MOSFETs: Influence of space-quantization effects on the high-frequency noise

    Proceedings of SPIE - The International Society for Optical Engineering

  2. On the influence of space-quantization effects on the RF noise behaviour of DG mosfets

    Fluctuation and Noise Letters, Vol. 4, Núm. 4

2003

  1. High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation

    Proceedings of SPIE - The International Society for Optical Engineering

2002

  1. Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

    Physica B: Condensed Matter

  2. Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

    Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156

  3. RF noise in a short-channel n-MOSFET: A Monte Carlo study

    Materials Science Forum

2001

  1. High injection effects on noise characteristics of Si BJTs and SiGe HBTs

    Microelectronics Reliability, Vol. 41, Núm. 6, pp. 847-854

  2. Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

    Semiconductor Science and Technology, Vol. 16, Núm. 11, pp. 939-946

  3. Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1582-1588

1996

  1. Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre n+nn+ silicon structures

    Semiconductor Science and Technology, Vol. 11, Núm. 6, pp. 865-872

  2. Hydrodynamic modeling of transport and noise spectra in n+nn+semiconductor structures

    European Solid-State Device Research Conference

  3. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

    Semiconductor Science and Technology, Vol. 11, Núm. 3, pp. 380-387