Tomás
González Sánchez
Catedrático de Universidad
University of Lille Nord de France
Lila, FranciaPublications in collaboration with researchers from University of Lille Nord de France (17)
2024
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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics, Vol. 132, Núm. 4
2021
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Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301
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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics, Vol. 130, Núm. 10
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
2018
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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Journal of Applied Physics, Vol. 123, Núm. 3
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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
Applied Physics Letters, Vol. 113, Núm. 4
2017
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Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Semiconductor Science and Technology, Vol. 32, Núm. 3
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Stochastic model for action potential simulation including ion shot noise
Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430
2015
2014
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On the effect of δ-doping in self-switching diodes
Applied Physics Letters, Vol. 105, Núm. 9
2008
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Ballistic nanodevices for high frequency applications
International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808
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Comparison between the noise performance of double- and single-gate InP-based HEMTs
IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540
2004
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Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications
IEEE Transactions on Electron Devices, Vol. 51, Núm. 4, pp. 521-528