Publicaciones en colaboración con investigadores/as de University of Lille Nord de France (17)

2024

  1. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  2. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2021

  1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  3. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

    Journal of Applied Physics, Vol. 130, Núm. 10

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3

  2. Stochastic model for action potential simulation including ion shot noise

    Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430

2014

  1. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

2004

  1. Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications

    IEEE Transactions on Electron Devices, Vol. 51, Núm. 4, pp. 521-528