Publicaciones (364) Publicaciones de Tomás González Sánchez

2024

  1. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420

  2. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

  3. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

    Journal of Applied Physics, Vol. 135, Núm. 4

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

    IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135

  3. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  4. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  5. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques

  6. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  7. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  8. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  9. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

  10. Terahertz Electronic Devices

    Springer Handbooks (Springer Science and Business Media Deutschland GmbH), pp. 807-849

  11. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

    Nanotechnology, Vol. 34, Núm. 32

2022

  1. Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes

    32nd International Symposium of Space Terahertz Technology, ISSTT 2022

  2. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  3. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

  4. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

    Solid-State Electronics, Vol. 193

  5. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

  6. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

    Sensors, Vol. 22, Núm. 4