Publicaciones en las que colabora con Javier Mateos López (70)

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2023

  1. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  2. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

2022

  1. Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes

    32nd International Symposium of Space Terahertz Technology, ISSTT 2022

  2. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

  3. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  2. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2020

  1. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535

  2. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

    Journal of Computational Electronics, Vol. 19, Núm. 2, pp. 792-799

2018

  1. Fabrication Process of Non-Linear Planar Diodes Based on GaN

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    Journal of Applied Physics, Vol. 123, Núm. 3

  3. Ion shot noise in Hodgkin–Huxley neurons

    Journal of Computational Electronics, Vol. 17, Núm. 4, pp. 1790-1796

2017

  1. Improvement of the planar schottky diode capacity model for the implementation in the non-linear harmonic balance ADS simulator for multipliers design

    27th International Symposium on Space Terahertz Technology, ISSTT 2016

  2. Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. Stochastic model for action potential simulation including ion shot noise

    Journal of Computational Electronics, Vol. 16, Núm. 2, pp. 419-430

  4. Stochastic model for ion shot noise in Hodgkin and Huxley neurons

    2017 International Conference on Noise and Fluctuations, ICNF 2017

2016

  1. Modeling edge capacitances in ultra-scaled GaAs Schottky barrier diodes for THz applications

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)

  2. Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 10, pp. 3900-3907

2015

  1. Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

    Journal of Physics: Conference Series