Publicaciones en las que colabora con Daniel Pardo Collantes (26)

2006

  1. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532

2005

  1. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

    AIP Conference Proceedings

2004

  1. 2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: Active layer thickness and noise performance

    Semiconductor Science and Technology

  2. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications

    Semiconductor Science and Technology, Vol. 19, Núm. 5, pp. 634-643

  3. Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs

    Proceedings of SPIE - The International Society for Optical Engineering

  4. Towards the nanoscale: Influence of scaling on the electronic transport and small-signal behaviour of MOSFETs

    Nanotechnology

2003

  1. High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation

    Proceedings of SPIE - The International Society for Optical Engineering

2002

  1. Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

    Physica B: Condensed Matter

  2. Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

    Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156

  3. RF noise in a short-channel n-MOSFET: A Monte Carlo study

    Materials Science Forum

2001

  1. High injection effects on noise characteristics of Si BJTs and SiGe HBTs

    Microelectronics Reliability, Vol. 41, Núm. 6, pp. 847-854

  2. Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

    Semiconductor Science and Technology, Vol. 16, Núm. 11, pp. 939-946

  3. Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1582-1588

2000

  1. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures

    Semiconductor Science and Technology, Vol. 15, Núm. 3, pp. 277-285

  2. Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

    Journal of Applied Physics, Vol. 88, Núm. 3, pp. 1511-1514

  3. Physically based comparison of current noise analysis of Si BJT's and SiGe HBT's

    European Solid-State Device Research Conference

1999

  1. 2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT

    Physica B: Condensed Matter, Vol. 272, Núm. 1-4, pp. 263-266

1997

  1. Analysis of voltage noise in forward-biased silicon bipolar homojunctions: Low- and high-injection regimes

    Applied Physics Letters, Vol. 71, Núm. 23, pp. 3382-3384

  2. Monte carlo comparative study of current-mode noise in Si/Si1-xGexstrained heterojunctions

    European Solid-State Device Research Conference

  3. Study of current-mode noise of Si1-xGex/Si strained heterojunctions

    Physica Status Solidi (B) Basic Research, Vol. 204, Núm. 1, pp. 462-465